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HRU180N10K - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A D-PAK I-PAK 2 1 3 HRD180N10K 1 2 3 HRU180N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source.

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Datasheet Details

Part number HRU180N10K
Manufacturer SemiHow
File Size 955.92 KB
Description N-Channel MOSFET
Datasheet download datasheet HRU180N10K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRD180N10K_HRU180N10K HRD180N10K / HRU180N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A D-PAK I-PAK 2 1 3 HRD180N10K 1 2 3 HRU180N10K 1.Gate 2. Drain 3.