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HRU13N10K - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 20 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 85 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 135 Pȍ (Typ. ) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.5 A D-PAK I-PAK 2 1 3 HRD13N10K 1 2 3 HRU13N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol P.

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Datasheet Details

Part number HRU13N10K
Manufacturer SemiHow
File Size 325.55 KB
Description N-Channel MOSFET
Datasheet download datasheet HRU13N10K Datasheet

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Full PDF Text Transcription

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HRD13N10K_HRU13N10K HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 20 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 135 Pȍ (Typ.) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.5 A D-PAK I-PAK 2 1 3 HRD13N10K 1 2 3 HRU13N10K 1.Gate 2. Drain 3.
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