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HRU120N10K - 100V N-Channel Trench MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 65 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 10 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Sep 2015 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A D-PAK I-PAK 2 1 3 HRD120N10K 1 2 3 HRU120N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Volt.

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Datasheet Details

Part number HRU120N10K
Manufacturer SemiHow
File Size 235.43 KB
Description 100V N-Channel Trench MOSFET
Datasheet download datasheet HRU120N10K Datasheet

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Full PDF Text Transcription

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HRD120N10K_HRU120N10K HRD120N10K / HRU120N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 65 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 10 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested Sep 2015 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A D-PAK I-PAK 2 1 3 HRD120N10K 1 2 3 HRU120N10K 1.Gate 2. Drain 3.
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