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HRP100N08K - N-Channel Trench MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 73 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 8.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 8.5 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

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Datasheet Details

Part number HRP100N08K
Manufacturer SemiHow
File Size 854.79 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRP100N08K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRP100N08K HRP100N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 73 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 8.5 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3.
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