HFS7N80 Datasheet 800V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG.