Datasheet4U Logo Datasheet4U.com

HFS75N75 - 75V N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source.

📥 Download Datasheet

Datasheet Details

Part number HFS75N75
Manufacturer SemiHow
File Size 757.47 KB
Description 75V N-Channel MOSFET
Datasheet download datasheet HFS75N75 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFS15 SOLID STATE RELAY HF
HFS2 MOS RELAY HF
HFS20 SOLID STATE RELAY HF
HFS21 THREE-PHASE MOTOR CONTROL MODULE HF
HFS22 1GBT MODULE HF

Other Datasheets by SemiHow

Part Number Description
HFS730 400V N-Channel MOSFET
HFS730F N-Channel MOSFET
HFS730S N-Channel MOSFET
HFS730U N-Channel MOSFET
HFS740 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFS75N75 Dec 2008 HFS75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.
Published: |