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HFS10N60S - N-Channel MOSFET

Features

  • ˜ Originative New Design ˜ Superior Avalanche Rugged Technology ˜ Robust Gate Oxide Technology ˜ Very Low Intrinsic Capacitances ˜ Excellent Switching Characteristics ˜ Unrivalled Gate Charge : 29 nC (Typ. ) ˜ Extended Safe Operating Area ˜ Lower RDS(ON) : 0.67 ȍ (Typ. ) @VGS=10V ˜ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFS10N60S
Manufacturer SemiHow
File Size 246.27 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS10N60S Datasheet

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Full PDF Text Transcription

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HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A FEATURES ˜ Originative New Design ˜ Superior Avalanche Rugged Technology ˜ Robust Gate Oxide Technology ˜ Very Low Intrinsic Capacitances ˜ Excellent Switching Characteristics ˜ Unrivalled Gate Charge : 29 nC (Typ.) ˜ Extended Safe Operating Area ˜ Lower RDS(ON) : 0.67 ȍ (Typ.) @VGS=10V ˜ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3.
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