Datasheet4U Logo Datasheet4U.com

HFS11N40 - 400V N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ. ) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Dr.

📥 Download Datasheet

Datasheet Details

Part number HFS11N40
Manufacturer SemiHow
File Size 0.97 MB
Description 400V N-Channel MOSFET
Datasheet download datasheet HFS11N40 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFS15 SOLID STATE RELAY HF
HFS2 MOS RELAY HF
HFS20 SOLID STATE RELAY HF
HFS21 THREE-PHASE MOTOR CONTROL MODULE HF
HFS22 1GBT MODULE HF

Other Datasheets by SemiHow

Part Number Description
HFS11N80Z 800V N-Channel MOSFET
HFS10N60S N-Channel MOSFET
HFS10N60U N-Channel MOSFET
HFS10N65S N-Channel MOSFET
HFS10N65U N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3.
Published: |