HFS4N65 Datasheet - SemiHow

HFS4N65 N-Channel MOSFET

HFS4N65 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFS4N65 Datasheet (813.23 KB)