HFS4N60 Datasheet - SEMIHOW

HFS4N60 600V N-Channel MOSFET

HFS4N60 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFS4N60 Datasheet (767.59 KB)