HFS4N50 Datasheet - SemiHow

HFS4N50 N-Channel MOSFET

HFS4N50 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFS4N50 Datasheet (696.97 KB)