100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt.
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HFS10N65S
March 2014
HFS10N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3.
HFS10N65S Datasheet
