HFS10N60U
HFS10N60U is N-Channel MOSFET manufactured by SemiHow.
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7S#9GS=10V 100% Avalanche Tested
Oct 2013
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 9.5- 6.0- 38- ρ30 470 9.5 5.0 4.5
PD TJ, TSTG TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
50 0.40 -55 to +150
- Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC...
