SSD50N10 mosfet equivalent, n-ch enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
50N10
Date Code
P.
.
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect d.
The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell densit.
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