SSD50N03 datasheet, mosfet equivalent, SeCoS

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Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N03 Date Code P.

Application

. TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect d.

Description

The SSD50N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell densit.

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