SSD50N10-C datasheet, mosfet equivalent, SeCoS

Features and benefits

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect Decline
* 100% EAS Guaranteed
* Green Device Availabl.

Application

FEATURES
* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect .

Description

The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. FEATURES
* Advanced High Cell Density Trench T.

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