SSD50N10-C mosfet equivalent, n-ch enhancement mode power mosfet.
* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect Decline
* 100% EAS Guaranteed
* Green Device Availabl.
FEATURES
* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect .
The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
FEATURES
* Advanced High Cell Density Trench T.
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