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SMS2001-C - P-Channel MOSFET

Description

The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge F SOT-23 A L 3 Top View CB 1 1 2 E D G H 3 2 J.

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Datasheet Details

Part number SMS2001-C
Manufacturer SeCoS
File Size 360.40 KB
Description P-Channel MOSFET
Datasheet download datasheet SMS2001-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS2001-C -2A, -20V, RDS(O ) 200mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved.
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