Datasheet4U Logo Datasheet4U.com

SMS2020 - N-Channel MOSFET

Datasheet Summary

Description

The SMS2020 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

📥 Download Datasheet

Datasheet preview – SMS2020

Datasheet Details

Part number SMS2020
Manufacturer SeCoS Halbleitertechnologie
File Size 554.59 KB
Description N-Channel MOSFET
Datasheet download datasheet SMS2020 Datasheet
Additional preview pages of the SMS2020 datasheet.

📁 Similar Datasheet

  • SMS202 - Silicon Schottky Diode (MA-COM)
  • SMS202 - Silicon Schottky Diodes (Aeroflex)
  • SMS2001-C - P-Channel MOSFET (SeCoS)
  • SMS2002-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SMS2009E-C - N-Channel MOSFET (SeCoS)
  • SMS201 - Silicon Schottky Diode (MA-COM)
  • SMS2012-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SMS2301 - P-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SMS2301-C - P-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SMS2301Y-C - P-Channel Enhancement Mode Power MOSFET (SeCoS)
Other Datasheets by SeCoS Halbleitertechnologie

Full PDF Text Transcription

Click to expand full text
SMS2020 Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free 830mA, 20V N-Channel MOSFET DESCRIPTIONS The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. 1 SOT-23 A 3 3 L Top View 2 C B 1 2 MECHANICAL DATA     K E D Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F REF. G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.
Published: |