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SJP65SN10J-C Datasheet, SeCoS

SJP65SN10J-C mosfet equivalent, n-channel enhancement mode power mosfet.

SJP65SN10J-C Avg. rating / M : 1.0 rating-11

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SJP65SN10J-C Datasheet

Features and benefits

High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good he.

Application

DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current G.

Description

SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avala.

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TAGS

SJP65SN10J-C
N-Channel
Enhancement
Mode
Power
MOSFET
SJP110SN04-C
SJP110SN10J-C
SJPA-D3
SeCoS

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