SJP65SN10J-C mosfet equivalent, n-channel enhancement mode power mosfet.
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good he.
DFN5x6-8J
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current G.
SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
DFN5x6-8J
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avala.
Image gallery
TAGS
Download