SJP110SN10J-C datasheet, mosfet equivalent, SeCoS

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Features and benefits

* High density cell design for ultra low RDS(ON)
* High Power and current handing capability
* Load switch
* Good stability and uniformity with high EAS <.

Application

DFN5x6-8J FEATURES
* High density cell design for ultra low RDS(ON)
* High Power and current handing capabili.

Description

SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES
* High density cell design for ultra low RDS(ON)
* High Po.

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