SJP110SN04-C datasheet, mosfet equivalent, SeCoS

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Features and benefits

High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICA.

Application

DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and unifo.

Description

SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load .

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