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SJP110SN04-C Datasheet, SeCoS

SJP110SN04-C mosfet equivalent, n-channel shielded gate trench power mosfet.

SJP110SN04-C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 250.56KB)

SJP110SN04-C Datasheet
SJP110SN04-C
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 250.56KB)

SJP110SN04-C Datasheet

Features and benefits

High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICA.

Application

DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and unifo.

Description

SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load .

Image gallery

SJP110SN04-C Page 1 SJP110SN04-C Page 2 SJP110SN04-C Page 3

TAGS

SJP110SN04-C
N-Channel
Shielded
Gate
Trench
Power
MOSFET
SeCoS

Manufacturer


SeCoS

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