SJP110SN04-C mosfet equivalent, n-channel shielded gate trench power mosfet.
High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation
APPLICA.
DFN5x6-8J
FEATURES
High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and unifo.
SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
DFN5x6-8J
FEATURES
High density cell design for ultra low RDS(ON) Battery switch Load .
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