SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=20mA IB=2m A
VBE Base-emitter on voltage
IC=20mA ; VCE=20V
V(BR)CBO Collector-base breakdown voltage
IC=10µA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=100µA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA; IC=0
hFE DC current gain
IC=20mA ; VCE=20V
COB Output capacitance
IE=0; VCB=30V;f=1MHz
fT Transition frequency
IE=20mA ; VCB=20V
Product Specification
2SC1514
MIN TYP. MAX UNIT
1.5 V
1.2 V
300 V
300 V
7V
30 200
4 pF
50 MHz
2
