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Hitachi Power Semiconductor Device Electronic Components Datasheet

C1515K Datasheet

2SC1515K

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2SC1515(K)
Silicon NPN Triple Diffused
Application
High voltage switching
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

C1515K Datasheet

2SC1515K

No Preview Available !

2SC1515 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
200
200
150
5
50
200
150
–55 to +150
Unit
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CES
voltage
200
Emitter to base breakdown
voltage
V(BR)CEO
V(BR)EBO
150
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
hFE
VCE(sat)
30
Base to emitter saturation
voltage
VBE(sat)
Gain bandwidth product
Collector output capacitance
fT
Cob
60
Typ
Max
Unit
V
Test conditions
IC = 10 µA, RBE = 0
—V
—V
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
0.1 µA
300
1.0 V
VCB = 20 V, IE = 0
VCE = 6 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
1.5 V
IC = 10 mA, IB = 1 mA
— MHz VCE = 6 V, IC = 10 mA
10 pF VCB = 6 V, IE = 0, f = 1 MHz
2


Part Number C1515K
Description 2SC1515K
Maker Hitachi Semiconductor
PDF Download

C1515K Datasheet PDF






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