SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=35V; IE=0
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=2V
fT Transition frequency
IC=0.2A ; VCE=10V
hFE Classifications
BC
60-120
100-200
Product Specification
2SC1516
MIN TYP. MAX UNIT
35 V
5V
2.0 V
1.5 V
20 µA
20 µA
60 200
110 MHz
2
