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SavantIC

2SC2333 Datasheet Preview

2SC2333 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·Switching regulator
·DC-DC converter
·Ultrasonic appliance
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2333
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
PT
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
2
4
1
15
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SC2333 Datasheet Preview

2SC2333 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A;IB=0.1A;L=1mA
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A
VBEsat
ICER
ICEX1
ICEX2
ICBO
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Collector cut-off current
IC=0.5A; IB=0.1A
VCE=400V;RBE=51:;
Ta=125
VCE=400V;VBE(OFF)=-5.0V
VCE=400V;VBE(OFF)=-5.0V
Ta=125
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
ton Turn on time
tstg Storage time
tf Fall time
IC=0.5A;IB1=-IB2=0.1A
RL=300:;VCC=150V
Product Specification
2SC2333
MIN TYP. MAX UNIT
400 V
1.0 V
1.2 V
1.0 mA
10 µA
1.0 mA
10 µA
10 µA
20 80
10
1.0 µs
2.5 µs
1.0 µs
hFE-1 classifications
ML K
20-40
30-60
40-80
2


Part Number 2SC2333
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

2SC2333 Datasheet PDF






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