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CPH3306 - Ultrahigh-Speed Switching Applications

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2152A [CPH3306] 0.4 3 0.6 0.05 1 1.9 2 0.2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a.

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CPH3303 Ultrahigh-Speed Switching Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152A [CPH3306] 0.4 3 0.6 0.05 1 1.9 2 0.2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.
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