2SJ651
2SJ651 is P CHANNEL SILICON TRASISTOR manufactured by SANYO.
Features
- -
- Package Dimensions unit : mm 2063A
[2SJ651]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
4.5 2.8
1.6 1.2 0.75 1 2 3 2.55
2.4 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings --60 ±20 --20 --80 2.0 25 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1m A, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1m A VDS=-10V, ID=--10A Ratings min --60 --1 ±10 -1.2 11 17 --2.6 typ max Unit V µA µA V S
Marking : J651
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM...
