2SC5699 transistor equivalent, npn triple diffused planar silicon transistor.
High speed. High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process.
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High speed. High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of HVP process). www.DataShee U.
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