Pin Name
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
/ Collector-emitter voltage (Base open)
VCEO
50
V
1. Base 2. Emitter 3. Collector
e Emitter-base voltage (Collector open)
pe) Collector current
nc d ge. ed ty Peak collector current
sta tinu Collector power dissipation
a e cycle iscon Junction temperatu.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2021G
Features
Package
High forward current transfer ratio hFE
Code
SSSMini3-F2
Absolute Maximum Ratings Ta = 25°C
Pin Name
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
/ Collector-emitter voltage (Base open)
VCEO
50
V
1. Base 2. Emitter 3. Collector
e Emitter-base voltage (Collector open)
pe) Collector current
nc d ge.