Features
150 C TJ operation.
Center tap configuration.
Ultralow forward voltage drop.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
Trench MOS Schottky technology.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request
ST2060C
STB2.
Datasheet Details
Part number
STB2060C
Manufacturer
Sangdest Microelectronics
File Size
340.14 KB
Description
SCHOTTKY RECTIFIER
Datasheet
STB2060C Datasheet
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Full PDF Text Transcription (Reference)
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Technical Data Data Sheet N1421, Rev.
Published:
Feb 19, 2019
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