STB200N04
features
Type STB200N04
- VDSS 40V
RDS(on) <0.0040Ω
ID 120A
Pw 300W
100% avalanche tested drive
1 3
..
- Standard threshold
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications.
D²PAK
Internal schematic diagram
Applications
- Switching application
- Automotive
Order codes
Part number STB200N04 Marking B200N04 Package D²PAK Packaging Tape & reel
November 2006
Rev 1
1/13
.st. 13
Contents
Contents
1 2 Electrical ratings
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- - . . . . 3 Electrical characteristics
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