Click to expand full text
STB200N04
N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET™ Power MOSFET
General features
Type STB200N04
■
VDSS 40V
RDS(on) <0.0040Ω
ID 120A
Pw 300W
100% avalanche tested drive
1 3
www.DataSheet4U.com ■ Standard threshold
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications.