STB200NF03-1
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D²PAK TO-263
I²PAK TO-262
3 1 2
TO-220
..
STB200NF03/-1 STP200NF03
THERMAL DATA
Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Max Typ 0.5 62.5 see curve on page 6 300 °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A
VDS =...
