K9F1G08R0A datasheet, memory equivalent, Samsung semiconductor

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Features and benefits

* Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Dat.

Application

such as solid state file storage and other portable applications requiring non-volatility. 2 K9F1G08R0A K9F1G08U0A K9K.

Description

of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of Command Sets is added 1. CE access time : 23ns->35ns (p.11) 1. The value of tREA for 3.3V device is changed.(18ns->20ns) 2. EDO mode is added. 1. The f.

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