K9F1G08R0B Overview
Offered in 128Mx8bit, the K9F1G08R0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be.
K9F1G08R0B Key Features
- Voltage Supply
- 1.8V Device(K9F1G08R0B) : 1.65V ~ 1.95V
- Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
K9F1G08R0B Applications
- Samsung Electronics reserves the right to change products or specification without notice
