Datasheet4U Logo Datasheet4U.com

K9F1G08B0C FLASH MEMORY

K9F1G08B0C Description

K9F1G08B0C K9F1G08U0C Advance FLASH MEMORY K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.
Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit NAND Flash Memory with spare 32M-bit.

K9F1G08B0C Features

* Voltage Supply - 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)

K9F1G08B0C Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

📥 Download Datasheet

Preview of K9F1G08B0C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
K9F1G08B0C
Manufacturer
Samsung
File Size
839.20 KB
Datasheet
K9F1G08B0C-Samsung.pdf
Description
FLASH MEMORY

📁 Related Datasheet

  • K9F1G08D0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
  • K9F1G08Q0A - FLASH MEMORY (Samsung semiconductor)
  • K9F1G08Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
  • K9F1G08R0A - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory (Samsung semiconductor)
  • K9F1G08R0B - FLASH MEMORY (Samsung Electronics)
  • K9F1G08U0A - FLASH MEMORY (Samsung semiconductor)
  • K9F1G08U0B - Flash Memory (Samsung Electronics)
  • K9F1G08U0E - 1Gb E-die NAND Flash (Samsung semiconductor)

📌 All Tags

FLASH MEMORY Samsung
Samsung K9F1G08B0C-like datasheet