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K9F1G08B0C

Manufacturer: Samsung Semiconductor

K9F1G08B0C datasheet by Samsung Semiconductor.

K9F1G08B0C datasheet preview

K9F1G08B0C Datasheet Details

Part number K9F1G08B0C
Datasheet K9F1G08B0C-Samsung.pdf
File Size 839.20 KB
Manufacturer Samsung Semiconductor
Description FLASH MEMORY
K9F1G08B0C page 2 K9F1G08B0C page 3

K9F1G08B0C Overview

Offered in 128Mx8bit, the K9F1G08X0C is a 1G-bit.

K9F1G08B0C Key Features

  • Voltage Supply
  • 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V
  • 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (128M + 4M) x 8bit
  • Data Register : (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation

K9F1G08B0C Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

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K9F1G08Q0M-YIB0 1Gb 1.8V NAND Flash Errata
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K9F1G08U0D 1Gb NAND Flash
K9F1G08U0M-FCB0 1Gb 1.8V NAND Flash Errata
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K9F1G08U0M-PCB0 1Gb 1.8V NAND Flash Errata
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K9F1G08B0C Distributor

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