K9F1G08B0C
K9F1G08B0C is FLASH MEMORY manufactured by Samsung Semiconductor.
FEATURES
- Voltage Supply
- 2.7V Device(K9F1G08B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
- Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology -Endurance : TBD Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : TBD
- mand Driven Operation
- Intelligent Copy-Back with internal 1bit/528Byte EDC
- Unique ID for Copyright Protection
- Package :
- K9F1G08B0C-PCB0/PIB0 : Pb-FREE PACKAGE 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0C-PCB0/PIB0 : Pb-FREE PACKAGE 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 128Mx8bit, the K9F1G08X0C is a...
