logo

K6R4008V1C Datasheet, Samsung semiconductor

K6R4008V1C static equivalent, 512kx8 bit high speed static.

K6R4008V1C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 175.22KB)

K6R4008V1C Datasheet
K6R4008V1C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 175.22KB)

K6R4008V1C Datasheet

Features and benefits


* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating K6R4008V1C-10 : 155mA.

Application

The K6R4008V1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM C.

Description

The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R4008V1C Page 1 K6R4008V1C Page 2 K6R4008V1C Page 3

TAGS

K6R4008V1C
512Kx8
Bit
High
Speed
Static
Samsung semiconductor

Manufacturer


Samsung semiconductor

Related datasheet

K6R4008V1B

K6R4008V1B-C

K6R4008V1B-I

K6R4008V1B-L

K6R4008V1B-P

K6R4008V1D

K6R4008C1C

K6R4008C1C-C

K6R4008C1C-E

K6R4008C1C-I

K6R4008C1D

K6R4004C1C-C

K6R4004C1C-E

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts