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K6R4008V1B-C - 512K x8 Bit High Speed Static RAM

Download the K6R4008V1B-C datasheet PDF. This datasheet also covers the K6R4008V1B variant, as both devices belong to the same 512k x8 bit high speed static ram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K6R4008V1B_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4016C1D CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K6R4008V1B-I 512K x8 Bit High Speed Static RAM
K6R4008V1B-L 512K x8 Bit High Speed Static RAM
K6R4008V1B-P 512K x8 Bit High Speed Static RAM
K6R4008V1B 512K x8 Bit High Speed Static RAM
K6R4008V1C 512Kx8 Bit High Speed Static

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K6R4008V1B-C/B-L, K6R4008V1B-I/B-P PRELIMINARY CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Draft Data Jan. 1st, 1997 Rev. 1.0 Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Jun. 1st, 1997 Rev. 2.0 Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Add 30pF capacitive in test load. 2.3. Relax DC characteristics. Item Previous ICC 10ns 170mA 12ns 160mA 15ns 150mA ISB f=max. 40mA ISB1 f=0 10 / 1mA IDR VDR=3.0V 0.9mA Current 205mA 200mA 195mA 50mA 10 / 1.2mA 1.0mA Feb.11th.1998 Rev. 2.1 Change operating current at Industrial Temperature range.