K6R4008C1C-C - 512K x 8bit High Speed Static CMOS SRAM
Samsung Semiconductor
Download the K6R4008C1C-C datasheet PDF.
This datasheet also covers the K6R4008C1C variant, as both devices belong to the same 512k x 8bit high speed static cmos sram family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for K6R4008C1C-C (Reference)
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K6R4008C1C-C. For precise diagrams, and layout, please refer to the original PDF.
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperat...
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Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Rev. 2.0 2.1 Relax D.C parameters. Item 12ns ICC 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part.
K6R4008C1C-C Datasheet
