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K6R4008V1B Datasheet, Samsung semiconductor

K6R4008V1B ram equivalent, 512k x8 bit high speed static ram.

K6R4008V1B Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 182.98KB)

K6R4008V1B Datasheet
K6R4008V1B
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 182.98KB)

K6R4008V1B Datasheet

Features and benefits


* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver. Operating K6R4008V1B-10 : 205mA(Max.

Application

The K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or TSOP(II) forward or 44-pin plastic TSOP(II) forward. FUN.

Description

The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R4008V1B Page 1 K6R4008V1B Page 2 K6R4008V1B Page 3

TAGS

K6R4008V1B
512K
Bit
High
Speed
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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