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K6F8016V3A - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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General Description

The K6F8016V3A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support various operating temperature ranges.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Overview

K6F8016V3A Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft -Design Target Finalize Draft Date July 4, 2001 Remark Preliminary 1.0 September 26, 2001 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 3.0~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 44-TSOP2-400F/R CMOS SRAM www. DataSheet4U. com.

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