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K6F8016U6 - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F8016U6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00 CMOS SRAM 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K6F8016U6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6A CMOS SRAM
K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016T6C 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6F8016U6B Family Document Title CMOS SRAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 24, 2001 Remark Preliminary 1.0 Finalize - ICC2 change : 30mA to 28mA for 55ns product 25mA to 22mA for 70ns product September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 September 2001 K6F8016U6B Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.