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K6F4008U2E Datasheet, Samsung semiconductor

K6F4008U2E ram equivalent, 512k x8 bit super low power and low voltage full cmos static ram.

K6F4008U2E Avg. rating / M : 1.0 rating-11

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K6F4008U2E Datasheet

Features and benefits


* Process Technology: Full CMOS
* Organization: 512K x8 bit
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Out.

Description

The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The f.

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TAGS

K6F4008U2E
512K
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
K6F4008U2G
K6F4008R2C
K6F4016R4E
Samsung semiconductor

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