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K4X56163PI-FE - 16Mx16 Mobile DDR SDRAM

Download the K4X56163PI-FE datasheet PDF. This datasheet also covers the K4X56163PI-L variant, as both devices belong to the same 16mx16 mobile ddr sdram family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4X56163PI-L_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1.

Key Features

  • VDD/VDDQ = 1.8V/1.8V.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control (.

More Datasheets from Samsung Semiconductor

Part Number Description
K4X56163PI-FG 16Mx16 Mobile DDR SDRAM
K4X56163PI-LE 16Mx16 Mobile DDR SDRAM
K4X56163PI-LG 16Mx16 Mobile DDR SDRAM
K4X56163PE 16M x16 Mobile DDR SDRAM
K4X56163PE-LFG 16M x16 Mobile DDR SDRAM
K4X56163PE-LG 16M x16 Mobile DDR SDRAM
K4X56163PG-FE 16M x16 Mobile-DDR SDRAM
K4X56163PG-FG 16M x16 Mobile-DDR SDRAM
K4X56163PG-LE 16M x16 Mobile-DDR SDRAM
K4X56163PG-LG 16M x16 Mobile-DDR SDRAM