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K4X56163PI-FE - 16Mx16 Mobile DDR SDRAM

Download the K4X56163PI-FE datasheet PDF. This datasheet also covers the K4X56163PI-L variant, as both devices belong to the same 16mx16 mobile ddr sdram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K4X56163PI-L_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.

Internal clock signals are derived from CK/CK.

Overview

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1.

Key Features

  • VDD/VDDQ = 1.8V/1.8V.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control (.

More Datasheets from Samsung Semiconductor

Part Number Description
K4X56163PI-FG 16Mx16 Mobile DDR SDRAM
K4X56163PI-LE 16Mx16 Mobile DDR SDRAM
K4X56163PI-LG 16Mx16 Mobile DDR SDRAM
K4X56163PE 16M x16 Mobile DDR SDRAM
K4X56163PE-LFG 16M x16 Mobile DDR SDRAM
K4X56163PE-LG 16M x16 Mobile DDR SDRAM
K4X56163PG-FE 16M x16 Mobile-DDR SDRAM
K4X56163PG-FG 16M x16 Mobile-DDR SDRAM
K4X56163PG-LE 16M x16 Mobile-DDR SDRAM
K4X56163PG-LG 16M x16 Mobile-DDR SDRAM