Datasheet Summary
K4X56163PI
- L(F)E/G 16Mx16 Mobile DDR SDRAM
1. Features
- VDD/VDDQ = 1.8V/1.8V
- Double-data-rate architecture; two data transfers per clock cycle
- Bidirectional data strobe(DQS)
- Four banks operation
- Differential clock inputs(CK and CK)
- MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- EMRS cycle with address key programs
- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
- Internal Temperature pensated Self Refresh
- All inputs except data & DM are sampled at the positive going edge of the system clock(CK). ..
- Data I/O...