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K4X56163PI-LG - 16Mx16 Mobile DDR SDRAM

Download the K4X56163PI-LG datasheet PDF. This datasheet also covers the K4X56163PI-L variant, as both devices belong to the same 16mx16 mobile ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.

Internal clock signals are derived from CK/CK.

Key Features

  • VDD/VDDQ = 1.8V/1.8V.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4X56163PI-L_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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K4X1G163PE-FGC6 64Mx16 Mobile DDR SDRAM Samsung
K4X1G163PE-FGC8 64Mx16 Mobile DDR SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4X56163PI-LE 16Mx16 Mobile DDR SDRAM
K4X56163PI-FE 16Mx16 Mobile DDR SDRAM
K4X56163PI-FG 16Mx16 Mobile DDR SDRAM
K4X56163PE 16M x16 Mobile DDR SDRAM
K4X56163PE-LFG 16M x16 Mobile DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • All inputs except data & DM are sampled at the positive going edge of the system clock(CK). www.DataSheet4U.com • Data I/O transactions on both edges of data strobe, DM for masking.