logo

K7B163635B Datasheet, Samsung Electronics

K7B163635B sram equivalent, 512kx36 & 1mx18 synchronous sram.

K7B163635B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 424.73KB)

K7B163635B Datasheet

Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(18) bits and integrates address an.

Image gallery

K7B163635B Page 1 K7B163635B Page 2 K7B163635B Page 3

TAGS

K7B163635B
512Kx36
1Mx18
Synchronous
SRAM
Samsung Electronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts