K7B321835C Description
The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B321835C Key Features
- Synchronous Operation
- On-Chip Address Counter
- Self-Timed Write Cycle
- On-Chip Address and Control Registers
- VDD= 2.5 or 3.3V +/- 5% Power Supply
- 5V Tolerant Inputs Except I/O Pins
- Byte Writable Function
- Global Write Enable Controls a full bus-width write
- Power Down State via ZZ Signal
- LBO Pin allows a choice of either a interleaved burst or a linear burst
K7B321835C Applications
- Samsung Electronics reserves the right to change products or specification without notice