logo

K9LCGD8X1M Datasheet, Samsung

K9LCGD8X1M memory equivalent, flash memory.

K9LCGD8X1M Avg. rating / M : 1.0 rating-11

datasheet Download

K9LCGD8X1M Datasheet

Features and benefits


* Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
* Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) .

Application

such as solid state file storage and other portable applications requiring nonvolatility. 1.2 FEATURES
* Voltage Su.

Description

Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The device is offered in 3.3V Vcc & VccQ. (3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfe.

Image gallery

K9LCGD8X1M Page 1 K9LCGD8X1M Page 2 K9LCGD8X1M Page 3

TAGS

K9LCGD8X1M
FLASH
MEMORY
K9LCGD8S1M-B
K9LCGD8U1M-B
K9LCG08U0B
Samsung

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts