K9LCGD8U1M-B datasheet, memory equivalent, Samsung

Features and benefits

* Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
* Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) .

Application

such as solid state file storage and other portable applications requiring nonvolatility. 1.2 FEATURES
* Voltage Su.

Description

Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The device is offered in 3.3V Vcc & VccQ. (3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfe.

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