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K4T51163QG Datasheet, Samsung

K4T51163QG sdram equivalent, 512mb g-die ddr2 sdram.

K4T51163QG Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 0.96MB)

K4T51163QG Datasheet

Features and benefits

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMA.

Application


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* DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18503Q5A Packa.

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PC.

Image gallery

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TAGS

K4T51163QG
512Mb
G-die
DDR2
SDRAM
Samsung

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