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K4T51163QG, K4T51043QG Datasheet - Samsung

K4T51163QG 512Mb G-die DDR2 SDRAM

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE .

K4T51163QG Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate

K4T51043QG-Samsung.pdf

This datasheet PDF includes multiple part numbers: K4T51163QG, K4T51043QG. Please refer to the document for exact specifications by model.
K4T51163QG Datasheet Preview Page 2 K4T51163QG Datasheet Preview Page 3

Datasheet Details

Part number:

K4T51163QG, K4T51043QG

Manufacturer:

Samsung

File Size:

0.96 MB

Description:

512mb g-die ddr2 sdram.

Note:

This datasheet PDF includes multiple part numbers: K4T51163QG, K4T51043QG.
Please refer to the document for exact specifications by model.

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K4T51163QG K4T51043QG 512Mb G-die DDR2 SDRAM Samsung

K4T51163QG Distributor