K4T51163QE, K4T51083QE Datasheet - Samsung semiconductor

K4T51163QE 512Mb E-die DDR2 SDRAM Specification

10 5.0 DDR2 SDRAM Addressing 11 6.0 Absolute Maximum DC Ratings 12 7.0 AC & DC Operating Conditions 12 12 7.2 Operating Temperature Condition 13 7.3 Input DC Logic Level 13 7.4 Input AC Logic Level 13 7.5 AC Input Test Conditions 13 7.6 Differential input AC logic Level 14 7.7 Differential AC output.

K4T51043QE K4T51083QE K4T51163QE DDR2 SDRAM www.DataSheet4U.com 512Mb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON A.

K4T51163QE Features

* 4 3.0 Package Pinout/Mechanical Dimension & Addressing 5 3.1 x4 package pinout (Top View) : 60ball FBGA Package 5 3.2 x8 package pinout (Top View) : 60ball FBGA Package 6 3.3 x16 package pinout (Top View) : 84ball FBGA Package 7 3.4 FBGA Package Dimension(x4/x8) 8 3.5 FBGA Package Dimension(x16) 9 4

K4T51083QE_Samsungsemiconductor.pdf